Injection-voltaic effect based on multilayer semiconductor structures
Kh. K. AripovTashkent University of Information Technologies, Tashkent, UzbekistanN. B. AlimovaTashkent University of Information Technologies, Tashkent, UzbekistanKh. Kh. BustanovTashkent University of Information Technologies, Tashkent, UzbekistanE. V. Ob’edkovTashkent university of information technologiesSh. T. ToshmatovTashkent University of Information Technologies, Tashkent, Uzbekistan
ABI
Аннотация
The analogy between the photovoltaic effect in solar cells and the injection-voltaic effect in the multilayer p-n semiconductor structures is described. The possibility to create a new elemental base of analog and digital electronic devices based on the injection-voltaic effect is demonstrated.
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