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Ушбу иш иқтибос қилган ишлар

12 та иш

Иш: Positron probing of gamma-irradiated Ge doped with P, As, Sb, and Bi: Changes in atomic structures of defects due to n→p conversion

  1. Impurities and point defects in semiconductors

    V. V. Emtsev, T.V. Mashovets

    Мақола19817 иқтибос
    ABI

  2. Condensed matter : new research

    Mrinmay Das

    Китоб20075 иқтибос
    ABI

  3. Theory of Positron Annihilation in Solids

    Richard A. Ferrell

    Мақола19565 иқтибос
    ABI

  4. Vacancy–group-V-impurity atom pairs in Ge crystals doped with P, As, Sb, and Bi

    В. П. Маркевич, I.D. Hawkins, А. R. Peaker +5

    Мақола20044 иқтибос
    ABI

  5. Positron probing of point V-group impurity-vacancy complexes in γ-irradiated germanium

    N.Yu. Arutyunov, V. V. Emtsev

    Мақола20063 иқтибос
    ABI

  6. Donor-vacancy complexes in Ge: Cluster and supercell calculations

    J. Coutinho, Sven Öberg, V. J. B. Torres +3

    Мақола20062 иқтибос
    ABI

  7. Configuration of DV Complexes In Ge: Positron Probing of Ion Cores

    N.Yu. Arutyunov, V. V. Emtsev, E.M. Sayed +1

    Мақола20072 иқтибос
    ABI

  8. Elementally specific electron–positron annihilation radiation emitted from ion cores of group-V impurity–vacancy complexes in germanium

    N.Yu. Arutyunov, V. V. Emtsev

    МақолаMuon and positron interactions and applicationsPhysica B Condensed Matter20071 иқтибос
    ABI

  9. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  10. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  11. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI

  12. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI