Ушбу иш иқтибос қилган ишлар

8 та иш

Иш: Far-Action Defects Formation and Gettering in 6H-SiC Lely Crystals Irradiated by Bi

1. Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy

   T. Dalibor, Gerhard Pensl, H. Matsunami +4

   Мақола19975 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.155792

2. A High-Sensitivity System for Cathodoluminescent Studies with the Camebax Electron Probe Microanalyzer

   M. V. Zamoryanskaya, S. G. Konnikov, A. N. Zamoryanskii

   Мақола20042 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.534693

3. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.623832

4. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.623833

5. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.623834

6. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.623835

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.623836

8. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.623837