Modification of Au-Ti(W, Cr, TiB x )-GaAs contacts properties caused by external influences

In this paper it is considered an influence of gamma-radiation 60Co, microwave and ultrasonic processing on electro-physical properties and relaxation of internal stresses in Au-Ti(W, Cr, TiB x )-GaAs contacts, based on GaAs plate, containing n-n + structures of GaAs. Correlation between radius of curvature of GaAs plates and contact parameters is detected. It is shown experimentally, that modification of electro-physical parameters of diodes with Schottky barrier, based on GaAs is specified by internal stresses relaxation in gallium arsenide structures with contacts.

Ҳали таржима қилинмаган