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19 та иш

Иш: Tunable SiO2/Si-based nanostructures

Сарлавҳасиз
Бошқа11 иқтибос
ABI
Quantum dot heterostructures: Fabrication, properties, lasers (Review)
N. N. Ledentsov, V. M. Ustinov, V. A. Shchukin +3
Мақола19988 иқтибос
ABI
The history and future of semiconductor heterostructures
Zh. I. Alfërov
Мақола19986 иқтибос
ABI
Trap creation in silicon dioxide produced by hot electrons
D. J. DiMaria, J. Stasiak
Мақола19893 иқтибос
ABI
Электродинамика сплошных сред
L.D. LANDAU, E. M. Lifshit︠s︡
Китоб19822 иқтибос
ABI
Si/SiO2Structures with Quantum Size Effects: The Construction of a Low-Dimensional Nanoscale Electronic System in the Interface Layer of Si by Incorporating a Regularly Distributed Charge into SiO2
E. I. Goldman, Yu. V. Gulyaev, A. G. Zhdan +1
Мақола20012 иқтибос
ABI
The physics of SiO<sub>2</sub>layers
J.F. Verwey, E. A. Amerasekera, J. Bisschop
Мақола19902 иқтибос
ABI
MOS /metal oxide semiconductor/ physics and technology
E. H. Nicollian, J.R. Brews
Китоб19822 иқтибос
ABI
MOS (Metal Oxide Semiconductor) Physics and Technology
K.J.S. Cave
Мақола19832 иқтибос
ABI
Large periodic potential under lateral surface superlattices fabricated from heteroepitaxial stressor layers
C. J. Emeleus, B. Milton, A. R. Long +3
Мақола19982 иқтибос
ABI
Characteristics of Narrow Channel MOSFET Memory Based on Silicon Nanocrystals
Yi Shi, Kenichi Saitô, Hiroki Ishikuro +1
Мақола19992 иқтибос
ABI
Models and experiments on degradation of oxidized silicon
C. T. Sah
Мақола19902 иқтибос
ABI
Self-Assembly of Quantum-Dot Molecules: Heterogeneous Nucleation of SiGe Islands on Si(100)
Xuan Deng, Mohan Krishnamurthy
Мақола19982 иқтибос
ABI
Solution of poisson's equation in cylindrical coordinates
M.H. Hughes
Мақола19712 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI