Ушбу иш иқтибос қилган ишлар

10 та иш

Иш: Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

1. Large random telegraph noise in sub-threshold operation of nano-scale nMOSFETs

   J. P. Campbell, Lihua Yu, Kin P. Cheung +4

   Мақола20093 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.397912

2. Ultralow-Power Design in Near-Threshold Region

   Dejan Marković, C.C. Wang, Louis P. Alarcón +2

   Мақола20102 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.570274

3. Random telegraph signal amplitudes in sub 100 nm (decanano) MOSFETs: a 3D 'Atomistic' simulation study

   Asen Asenov, R. Balasubramaniam, A. R. Brown +2

   Мақола20022 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.573066

4. RTS amplitudes in decananometer MOSFETs: 3-D simulation study

   Asen Asenov, R. Balasubramaniam, A. R. Brown +1

   Мақола20032 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.664521

5. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.664517

6. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.664518

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.664519

8. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.664520

9. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.664522

10. Сарлавҳасиз

    Бошқа1 иқтибос

    ABIABI:AkademIndex/openalex/2026.other.664523