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Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

A. É. AtamuratovDepartment of Physics, Urganch State University, Urganch, UzbekistanR. GranznerDepartment of Solid-State Electronics, Institute of Micro- and Nanotechnologies, Ilmenau University of Technology, Ilmenau, GermanyM. KittlerDepartment of Solid-State Electronics, Institute of Micro- and Nanotechnologies, Ilmenau University of Technology, Ilmenau, GermanyZuhra AtamuratovaDepartment of Physics, Urganch State University, Urganch, UzbekistanMahkam HalillaevDepartment of Physics, Urganch State University, Urganch, UzbekistanFrank SchwierzDepartment of Solid-State Electronics, Institute of Micro- and Nanotechnologies, Ilmenau University of Technology, Ilmenau, Germany

NATO science for peace and security series. B, Physics and biophysicsbook series2013en

ABI

Аннотация

Аннотация мавжуд эмас.

Мавзулар

Semiconductor materials and devices Advancements in Semiconductor Devices and Circuit Design Low-power high-performance VLSI design

Идентификаторлар

DOI: 10.1007/978-94-007-6618-1_20

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