R. Granzner

2 та иш

Technical University of Ilmenau, Ehrenbergstrasse, 29, 98693 Ilmenau, Germany

1. Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate

   A. É. Atamuratov, M. M. Khalilloev, A.E. Abdikarimov +4

   МақолаAdvancements in Semiconductor Devices and Circuit DesignNanosystems Physics Chemistry Mathematics20172 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.541483

2. Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

   A. É. Atamuratov, R. Granzner, M. Kittler +3

   БобSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics20130 иқтибос

   ABIABI:AkademIndex/openalex/2013.chapter.000013