Mahkam Halillaev

1 та иш

Department of Physics, Urganch State University, Urganch, Uzbekistan

1. Simulation of Random Telegraph Noise in Nanometer nMOSFET Induced by Interface and Oxide Trapped Charge

   A. É. Atamuratov, R. Granzner, M. Kittler +3

   БобSemiconductor materials and devicesNATO science for peace and security series. B, Physics and biophysics20130 иқтибос

   ABIABI:AkademIndex/openalex/2013.chapter.000013