Мақола

Electron exchange between impurity centers of tin in lead chalcogenides

А. В. МарченкоHerzen State Pedagogical University of Russia, nab. Moiki 48, St.Petersburg, 191186, RussiaD. V. ZhilinaIoffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, RussiaК. У. БобохужаевNational University of Uzbekistan named after Mirzo Ulugbek, VUZ Gorodok, Tashkent, 700174, UzbekistanА. В. НиколаеваHerzen State Pedagogical University of Russia, nab. Moiki 48, St.Petersburg, 191186, RussiaЕ. И. ТеруковIoffe Physical-Technical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021, RussiaП. П. СерегинHerzen State Pedagogical University of Russia, nab. Moiki 48, St.Petersburg, 191186, Russia

Physics of the Solid Statejournal2015en

ABI

Аннотация

Electron exchange between neutral and doubly ionized U-minus centers of tin in partially compensated solid solutions Pb0.96Sn0.02Na0.01Tl0.01S, Pb0.99Sn0.005Na0.005S, Pb0.965Sn0.015Na0.01Tl0.01Se, and Pb0.988Sn0.005Na0.007Se has been investigated using 119mm Sn(119m Sn) emission Mössbauer spectroscopy. The activation energy of the process for PbS-based solid solutions is 0.11(2) eV and is comparable to the depth of energy levels of tin in the PbS band gap, while the activation energy of this process for PbSe-based solid solutions is comparable to the activation energy of donor U-minus centers of tin in PbSe being 0.05(1) eV. The exchange has been performed by the simultaneous transfer of two electrons with the use of the valence band states.

Ҳали таржима қилинмаган

Мавзулар

Chalcogenide Semiconductor Thin Films Phase-change materials and chalcogenides Semiconductor materials and interfaces

Идентификаторлар

DOI: 10.1134/s1063783415100182

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