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Иш: Highly sensitive photodetector based on ge double-barrier punch-through structure

1. Electrophysical and photoelectric characteristics of a three-barrier photodiode GaAs structure

   O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov +2

   МақолаSemiconductor Quantum Structures and DevicesTechnology and design in electronic equipment20180 иқтибос

   ABIABI:AkademIndex/openalex/2018.article.000896