On the possibility of applying n/(3C-SiC)–p/CDIAMOND white glow heterostructures with improved parameters in illumination systems with power consumption from solar radiation
Timur SalievScientific and Production Association Physics of the Sun, Tashkent, UzbekistanS. L. LutpullaevScientific and Production Association Physics of the Sun, Tashkent, UzbekistanA. KutlimuratovScientific and Production Association Physics of the Sun, Tashkent, Uzbekistan
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Аннотация
The voltage-current characteristics and electroluminescence of a light-emitting-diode (LED) n/(3C-SiC)–p/ CDIAMOND heterostructure with white glow without phosphor created on the basis of diamond film grown by the CVD method on n/(3C-SiC) substrates with a doped level of (5–8) × 1017 cm–3 are considered It is shown the possibility to improve the characteristics of created LED structures by their irradiation with a flux of high-energy (5 MeV) electrons of a certain dose and heat treatment.
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