Fractal Control of the Electron Spectrum of the Interfaces in Solar Elements Based on Covalent Semiconductors
Х. Б. АшуровArifov Institute of Ion-Plasma and Laser Technologies, Academy of Science of Uzbekistan, Tashkent, 100125, UzbekistanB. R. KutlimurotovArifov Institute of Ion-Plasma and Laser Technologies, Academy of Science of Uzbekistan, Tashkent, 100125, UzbekistanБ. Л. ОксенгендлерArifov Institute of Ion-Plasma and Laser Technologies, Academy of Science of Uzbekistan, Tashkent, 100125, Uzbekistan
ABI
Аннотация
Based on a combination of the Madelung-Seitz and Phillips-Penn approaches, the effect of fractality of the interface on its electronic structure in a covalent semiconductor solar cell is considered. The possibility of pumping a local level from the region of recombination to the region of attachment and back is found. A number of applications are considered, in particular, a new mechanism of radiative degradation by lowering the fractality of the interface.
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