Ушбу иш иқтибос қилган ишлар

8 та иш

Иш: Nickel-Dopant Atom Clusters and their Effect on the Recombination Properties of Silicon

1. In-Diffusion and Annealing Processes of Substitutional Nickel Atoms in Dislocation-Free Silicon

   Shuji Tanaka, Tetsuo Ikari, Hajime Kitagawa

   Мақола20016 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.296297

2. X-ray beam induced current—a synchrotron radiation based technique for the <i>in situ</i> analysis of recombination properties and chemical nature of metal clusters in silicon

   О. Ф. Вывенко, Tonio Buonassisi, A. A. Istratov +4

   Мақола20023 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.500796

3. Electrical properties and recombination activity of copper, nickel and cobalt in silicon

   A. A. Istratov, E. R. Weber

   Мақола19983 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.500799

4. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.500797

5. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.500798

6. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.500800

7. On the thermostability of electrical properties of p-Si&lt;P, Ni&gt; and p-Si&lt;P, Cu&gt;

   Sh. Makhkamov, M. Kаrimov, A. O. Kurbanov +2

   МақолаSilicon and Solar Cell TechnologiesRussian Physics Journal20051 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.500801

8. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.500802