Energy Spectrum of Defective Centers in Silicon Doped with Molybdenum
Shakhrukh Kh. DalievInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent,Shoira UsmanovaInstitute of Semiconductor Physics and Microelectronics at the National University of Uzbekistan, Tashkent,Anifa PaluanovaH LemkeR SachdevaP DeenapanrayP MallickN MishraD BacklundS EstreicherL SchefflerV KolkovskyWeberShKhZh DalievRakhmonovUtamuradovaM KvederKhoroshevaM KhoroshevaV OrlovN AbrosimovC Kveder
ABI
Аннотация
The processes of the formation of defect centers in Si doped with molybdenum have been using the methods of capacitive spectroscopy.
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