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Иш: Investigation on the Electronic Structure of Nanosized Barium Monosilicide Films Produced by Low-energy Implantation of Ba<sup>+</sup> Ions in Si

1. Changes in the Structure and Properties of Silicon Carbide under Gamma Irradiation

   B.B. Gaibnazarov, Gunel Imanova, Ш. Т. Хожиев +5

   МақолаAdvanced Materials and Semiconductor TechnologiesIntegrated ferroelectrics20231 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.390247