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Иш: Features of the electrophysical parameters of silicon serially doped with impurity atoms of phosphorus and boron

1. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

   Н. Ф. Зикриллаев, S. Koveshnikov, X. S. Turekeev +1

   МақолаSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20241 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.002944