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Иш: Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

  1. Ce-doping induced enhancement of resistive switching performance of Pt / NiFe 2 O 4 / Pt memory devices

    Aize Hao, Shuai He, Ni Qin +2

    Мақола20173 иқтибос
    ABI

  2. Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM

    Qi Liu, Jun Sun, Hangbing Lv +6

    Мақола20123 иқтибос
    ABI

  3. In-memory computing with resistive switching devices

    Daniele Ielmini, H.‐S. Philip Wong

    Мақола20183 иқтибос
    ABI

  4. A MoS<sub>2</sub>/PTCDA Hybrid Heterojunction Synapse with Efficient Photoelectric Dual Modulation and Versatility

    Shuiyuan Wang, Chunsheng Chen, Zhihao Yu +8

    Мақола20183 иқтибос
    ABI

  5. Nonvolatile Memories Based on Graphene and Related 2D Materials

    Simone Bertolazzi, Paolo Bondavalli, Stephan Roche +5

    Шарҳ мақола20193 иқтибос
    ABI

  6. Recent Progress in Artificial Synapses Based on Two-Dimensional van der Waals Materials for Brain-Inspired Computing

    Seunghwan Seo, Je‐Jun Lee, Hojun Lee +5

    Мақола20203 иқтибос
    ABI

  7. A synaptic memristor based on two-dimensional layered WSe<sub>2</sub> nanosheets with short- and long-term plasticity

    Songwen Luo, Kanghong Liao, Peixian Lei +8

    Мақола20213 иқтибос
    ABI

  8. Nanostructured Materials and Architectures for Advanced Optoelectronic Synaptic Devices

    Nasir Ilyas, Jinyong Wang, Chunmei Li +7

    Мақола20213 иқтибос
    ABI

  9. Novel charm of 2D materials engineering in memristor: when electronics encounter layered morphology

    Saima Batool, Muhammad Idrees, Shirui Zhang +2

    Шарҳ мақола20223 иқтибос
    ABI

  10. Competitive Hebbian learning through spike-timing-dependent synaptic plasticity

    Sen Song, Kenneth D. Miller, L. F. Abbott

    Мақола20002 иқтибос
    ABI

  11. Resistive switching memory effect of ZrO2 films with Zr+ implanted

    Qi Liu, Weihua Guan, Shibing Long +3

    Мақола20082 иқтибос
    ABI

  12. Normally-off Logic Based on Resistive Switches—Part I: Logic Gates

    Simone Balatti, Stefano Ambrogio, Daniele Ielmini

    Мақола20152 иқтибос
    ABI

  13. Field-induced resistive switching in metal-oxide interfaces

    S. Tsui, A. Baikalov, J. Cmaidalka +6

    Мақола20042 иқтибос
    ABI

  14. Ultrafast Synaptic Events in a Chalcogenide Memristor

    Yi Li, Yingpeng Zhong, Lei Xu +4

    Мақола20132 иқтибос
    ABI

  15. Experimental study for selection of electrode material for ZnO‐based memristors

    Ashish Kumar, Maryam Shojaei Baghini

    Мақола20142 иқтибос
    ABI

  16. Dielectric breakdown I: A review of oxide breakdown

    J.F. Verweij, J.H. Klootwijk

    Шарҳ мақола19962 иқтибос
    ABI

  17. A Low‐Temperature‐Grown Oxide Diode as a New Switch Element for High‐Density, Nonvolatile Memories

    Myoung‐Jae Lee, Sunae Seo, D.‐C. Kim +11

    Мақола20062 иқтибос
    ABI

  18. Nonvolatile Memory with Multilevel Switching: A Basic Model

    M. J. Rozenberg, Isao Inoue, M. J. Sánchez

    Мақола20042 иқтибос
    ABI

  19. High Uniformity of Resistive Switching Characteristics in a Cr/ZnO/Pt Device

    Wen-Yuan Chang, Hsin-Wei Huang, Wei‐Ting Wang +3

    Мақола20122 иқтибос
    ABI

  20. Electric modulation of conduction in multiferroic Ca-doped BiFeO3 films

    Chan‐Ho Yang, Jan Seidel, Steven Kim +14

    Мақола20092 иқтибос
    ABI

  21. Low-Frequency Negative Resistance in Thin Anodic Oxide Films

    T. W. Hickmott

    Мақола19622 иқтибос
    ABI

  22. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

    Julien Borghetti, Gregory S. Snider, Philip J. Kuekes +3

    Мақола20102 иқтибос
    ABI

  23. In situ imaging of the conducting filament in a silicon oxide resistive switch

    Jun Yao, Lin Zhong, Douglas Natelson +1

    Мақола20122 иқтибос
    ABI

  24. Phase-change materials for rewriteable data storage

    Matthias Wuttig, Noboru Yamada

    Мақола20072 иқтибос
    ABI

  25. Memristive behavior of ZnO/NiO stacked heterostructure

    Rui Zhang, Sh. U. Yuldashev, Jung‐Kyu Lee +3

    Мақола20132 иқтибос
    ABI