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Иш: Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

  1. Artificial synapse network on inorganic proton conductor for neuromorphic systems

    Li Qiang Zhu, Chang Wan, Li Guo +2

    Мақола20142 иқтибос
    ABI

  2. Photonic non-volatile memories using phase change materials

    Wolfram H. P. Pernice, Harish Bhaskaran

    Мақола20122 иқтибос
    ABI

  3. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3

    Krzysztof Szot, W. Speier, Gustav Bihlmayer +1

    Мақола20062 иқтибос
    ABI

  4. Bipolar switching behavior in TiN/ZnO/Pt resistive nonvolatile memory with fast switching and long retention

    Nuo Xu, L.F. Liu, Xianwen Sun +7

    Мақола20082 иқтибос
    ABI

  5. Transparent resistive random access memory and its characteristics for nonvolatile resistive switching

    Jung-Won Seo, Jae‐Woo Park, Keong Su Lim +2

    Мақола20082 иқтибос
    ABI

  6. Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation

    Chung-Nan Peng, Chun-Wen Wang, Tsung-Cheng Chan +6

    Мақола20122 иқтибос
    ABI

  7. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

    Deok‐Hwang Kwon, Kyung Min Kim, Jae Hyuck Jang +9

    Мақола20102 иқтибос
    ABI

  8. Amorphous Metal‐Sulphide Microfibers Enable Photonic Synapses for Brain‐Like Computing

    Behrad Gholipour, P. Bastock, C. Samuel Craig +3

    Мақола20152 иқтибос
    ABI

  9. Sequence to Sequence Learning with Neural Networks

    Ilya Sutskever, Oriol Vinyals, Quoc V. Le

    Препринт20142 иқтибос
    ABI

  10. Resistive Switching Characteristics of Sol–Gel Zinc Oxide Films for Flexible Memory Applications

    Sungho Kim, Hanul Moon, Dipti Gupta +2

    Мақола20092 иқтибос
    ABI

  11. Nonvolatile resistive switching memories-characteristics, mechanisms and challenges

    Feng Pan, Chao Chen, Zhishun Wang +3

    Мақола20102 иқтибос
    ABI

  12. The renaissance of black phosphorus

    Xi Ling, Han Wang, Shengxi Huang +2

    Мақола20152 иқтибос
    ABI

  13. Overview of the SpiNNaker System Architecture

    Steve Furber, David Lester, Luis A. Plana +4

    Мақола20122 иқтибос
    ABI

  14. The mechanism of electroforming of metal oxide memristive switches

    J. Joshua Yang, Feng Miao, Matthew D. Pickett +4

    Мақола20092 иқтибос
    ABI

  15. Bipolar and Unipolar Resistive Switching in Cu-Doped $ \hbox{SiO}_{2}$

    Christina Schindler, Sarath Chandran Puthen Thermadam, Rainer Waser +1

    Мақола20072 иқтибос
    ABI

  16. Hybrid graphene–quantum dot phototransistors with ultrahigh gain

    Gerasimos Konstantatos, Michela Badioli, Louis Gaudreau +5

    Мақола20122 иқтибос
    ABI

  17. Chemical Vapour Deposition

    S. M. Leeds, P. W. May, M. N. R. Ashfold +1

    Китоб20082 иқтибос
    ABI

  18. Sputter Deposition Processes

    Diederik Depla, Stijn Mahieu, J. E. Greene

    Боб20092 иқтибос
    ABI

  19. Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

    Duygu Kuzum, Rakesh Jeyasingh, Byoungil Lee +1

    Мақола20112 иқтибос
    ABI

  20. Charge transfer at carbon nanotube–graphene van der Waals heterojunctions

    Yuanda Liu, Fengqiu Wang, Yujie Liu +3

    Мақола20162 иқтибос
    ABI

  21. Solution‐Processed Two‐Dimensional MoS<sub>2</sub> Nanosheets: Preparation, Hybridization, and Applications

    Xiao Zhang, Zhuangchai Lai, Chaoliang Tan +1

    Шарҳ мақола20162 иқтибос
    ABI

  22. Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices

    Tuo Shi, Rui Yang, Xin Guo

    Мақола20162 иқтибос
    ABI

  23. Nonvolatile All‐Optical 1 × 2 Switch for Chipscale Photonic Networks

    Matthias Stegmaier, Carlos Rı́os, Harish Bhaskaran +2

    Мақола20162 иқтибос
    ABI

  24. Coexistence of Grain‐Boundaries‐Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride

    Chengbin Pan, Yanfeng Ji, Na Xiao +13

    Мақола20172 иқтибос
    ABI

  25. The effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory

    Cong Hu, Qi Wang, Shuai Bai +4

    Мақола20172 иқтибос
    ABI