Мақола

Effect of CuO doping on the performance of LaB6 interlayer films in Al/CuO:LaB6/p-Si/Al diodes

R.O. OcayaDepartment of Physics, University of the Free State, P. Bag X13, Phuthaditjhaba 9866, South AfricaAbdullah G. Al‐SehemiDepartment of Chemistry, Faculty of Science, King Khalid University, Abha 61413, P.O. Box 9004, Saudi ArabiaA. TataroğluDepartment of Physics, Faculty of Science, Gazi University, Ankara, TurkeyA. DereNanoscience and Nanotechnology Laboratory, Firat University, Elaziğ, Turkeyİbrahi̇m ErolAfyon Kocatepe University, Faculty of Science and Arts, Department of Chemistry, 03200 Afyonkarahisar, TurkeyMecit AksuDepartment of Chemistry, Faculty of Science and Arts, Düzce University, 81620, Düzce, TurkeyAhmed A. Al‐GhamdiDepartment of Physics, Faculty of Science, King Abdulaziz University, Jeddah 21589, Saudi ArabiaF. YakuphanoğluDepartment of Physics, Faculty of Science, Firat University, Elaziğ, Turkey

Physica B Condensed Matterjournal2023en

ABI

Аннотация

This study investigates the fabrication and performance analysis of Al/CuO:LaB6/p-Si/Al diodes with CuO-doped LaB6 interlayer films of varying concentrations (1%, 5%, and 10%). Experimental evidence demonstrates the limitations of 0% CuO doping, as pure LaB6 lacks a significant barrier height, resulting in ohmic behavior unsuitable for intended applications. Through comprehensive analyses under varying illuminations (20–100 mW/cm2) and frequencies (10 kHz–1 MHz), the study reveals that controlling CuO doping in LaB6 significantly enhances the effective barrier height at the LaB6:CuO heterojunction, improving rectification properties. This enhancement enables the diode to be well-suited for high-speed photonic devices utilizing one-step photoemission. The findings contribute to the development of high-performance LaB6-based devices, advancing photonic technologies by emphasizing the advantages of CuO doping.

Ҳали таржима қилинмаган

Мавзулар

Semiconductor materials and interfaces Semiconductor materials and devices Rare-earth and actinide compounds

Идентификаторлар

DOI: 10.1016/j.physb.2023.415111

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