Temperature Dependences of the Sputtering of Negative Silicon Cluster Ions
Б.Г. АтабаевArifov Institute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, 100125, Tashkent, UzbekistanR. DzabbarganovArifov Institute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, 100125, Tashkent, UzbekistanF. R. YuzikaevaArifov Institute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, 100125, Tashkent, UzbekistanM. A. PermukhamedovaArifov Institute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, 100125, Tashkent, UzbekistanZ. Sh. ShaymardanovArifov Institute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, 100125, Tashkent, UzbekistanA. S. KhalmatovArifov Institute of Ion-Plasma and Laser Technologies, Academy of Sciences of Uzbekistan, 100125, Tashkent, Uzbekistan
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Аннотация
The temperature dependences of the sputtering of negative ions of dimers and trimers of a Si(111) single crystal upon bombardment with cesium ions are studied for the first time by ultra-high-vacuum secondary-ion mass spectrometry. The sputtering temperature thresholds for the silicon dimer and trimer are measured, and a model is developed for the sputtering of adsorbed atoms and the silicon dimer of the 7 × 7-Si(111) superstructure.
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