ANALYSIS OF STUDYING THE STRUCTURE OF EPITAXIAL IRON FILMS ON GALLIUM ARSENIDE Fe/GaAs
Odinakhan RayimjonovaAcademic Lyceum Under Namangan Institute Of Engineering And Construction, Namangan, UzbekistanSherali ToshpulatovFergana Branch Of Tashkent University Of Information, Technologies Named After Muhammad Al-Khwarizmi, Fergana, UzbekistanGulrukhsor ErgashevaStudent, Fergana Branch Of Tashkent University Of Information, Technologies Named After Muhammad Al-Khwarizmi, Fergana, Uzbekistan DilshodDilshod Tulanov
ABI
Аннотация
The anisotropy in thin films coincides with the crystallographic direction of an increase in the thickness of the iron layer. The value of the cubic anisotropy constant decreases. In this case, the value of the uniaxial anisotropy constant, on the contrary, increases. The dilution of the semiconductor matrix with iron atoms is also noted, and the formation of Fe-Ga or Fe-As compounds is assumed. An analysis of the surface sensitivity of the spectra of As and Ga shows that As is more easily mixed with Fe than with Ga.
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