Asymmetric q-Gaussian functions to fit the Raman LO mode band in Silicon Carbide

Аннотация

Previous studies (Sparavigna, 2023) have demonstrated the Tsallis q-Gaussian functions suitable for the analysis of Raman spectra. Here we consider two asymmetric forms of them, with the aim of further improving the fitting of Raman spectra. The first asymmetric form, that we are here proposing for the first time, is a generalization of the Breit-Wigner-Fano function. The other profile is that made by two different half q-Gaussian functions, chosen to fit the two sides of a Raman band. The case study that we will discuss in detail is that of the Raman LO mode of Silicon Carbide.

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DOI

10.26434/chemrxiv-2023-f8gk3

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