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Иш: Revealing Bipolar Photoresponse in Multiheterostructured WTe2–GaTe/ReSe2–WTe2 P–N Diode by Hybrid 2D Contact Engineering

The rise of graphene
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Мақола200728 иқтибос
ABI
Two-dimensional atomic crystals
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Мақола20059 иқтибос
ABI
Bipolar Photoresponse of a Graphene Field-Effect Transistor Induced by Photochemical Reactions
Muhammad Farooq Khan, Ehsan Elahi, Najam Ul Hassan +8
МақолаGraphene research and applicationsACS Applied Electronic Materials20236 иқтибос
ABI
Enhanced electrical and broad spectral (UV-Vis-NIR) photodetection in a Gr/ReSe2/Gr heterojunction
Ehsan Elahi, Muhammad Farooq Khan, Shania Rehman +9
Мақола20204 иқтибос
ABI
Innovations in self-powered nano-photonics of emerging and flexible two-dimensional materials
Muhammad Abubakr, Ehsan Elahi, Shania Rehman +10
Мақола2D Materials and ApplicationsMaterials Today Physics20233 иқтибос
ABI
Tailoring the electrical properties of MoTe2 field effect transistor via chemical doping
Muhammad Waqas Iqbal, Aliya Amin, Muhammad Arshad Kamran +7
Мақола20193 иқтибос
ABI
Highly sensitive visible to infrared MoTe2photodetectors enhanced by the photogating effect
Hai Huang, Jianlu Wang, Weida Hu +13
Мақола20163 иқтибос
ABI
Self-Assembled Monolayer Doping for MoTe2 Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides
Dong Hyun Lee, Muhammad Rabeel, Young-Min Han +4
Мақола20233 иқтибос
ABI
Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire
Hehai Fang, Weida Hu, Peng Wang +14
Мақола20163 иқтибос
ABI
Formation of an MoTe2 based Schottky junction employing ultra-low and high resistive metal contacts
Sikandar Aftab, Muhammad Waqas Iqbal, Amir Muhammad Afzal +4
Мақола20193 иқтибос
ABI
The role of 2-Dimensional materials for electronic devices
Priya Kaushal, Gargi Khanna
Мақола20222 иқтибос
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Optical modulators with 2D layered materials
Zhipei Sun, A. Martinez, Feng Wang
Мақола20162 иқтибос
ABI
Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction
Nengjie Huo, Gerasimos Konstantatos
Мақола20172 иқтибос
ABI
Photodetectors based on graphene, other two-dimensional materials and hybrid systems
Frank H. L. Koppens, Thomas Mueller, Phaedon Avouris +3
Шарҳ мақола20142 иқтибос
ABI
Electronics based on two-dimensional materials
Gianluca Fiori, Francesco Bonaccorso, Giuseppe Iannaccone +5
Мақола20142 иқтибос
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Arrayed Van Der Waals Broadband Detectors for Dual‐Band Detection
Peng Wang, Shanshan Liu, Wenjin Luo +12
Мақола20172 иқтибос
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Ultrahigh‐Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe2/Graphene/SnS2 p–g–n Junctions
Alei Li, Qianxue Chen, Peipei Wang +8
Мақола20182 иқтибос
ABI
Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal–semiconductor contacts at the Schottky–Mott limit
Seunguk Song, Yeoseon Sim, Se‐Yang Kim +13
Мақола20202 иқтибос
ABI
Transistors based on two-dimensional materials for future integrated circuits
Saptarshi Das, Amritanand Sebastian, Eric Pop +15
Мақола20212 иқтибос
ABI
Contacts in 2D
S Das, P.-C Shen, G Kwon
Мақола20222 иқтибос
ABI
Wafer-scale and universal van der Waals metal semiconductor contact
Lingan Kong, Ruixia Wu, Yang Chen +20
Мақола20232 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI
Сарлавҳасиз
Бошқа1 иқтибос
ABI

Ушбу иш иқтибос қилган ишлар

The rise of graphene

Two-dimensional atomic crystals

Bipolar Photoresponse of a Graphene Field-Effect Transistor Induced by Photochemical Reactions

Enhanced electrical and broad spectral (UV-Vis-NIR) photodetection in a Gr/ReSe<sub>2</sub>/Gr heterojunction

Innovations in self-powered nano-photonics of emerging and flexible two-dimensional materials

Tailoring the electrical properties of MoTe2 field effect transistor via chemical doping

Highly sensitive visible to infrared MoTe<sub>2</sub>photodetectors enhanced by the photogating effect

Self-Assembled Monolayer Doping for MoTe<sub>2</sub> Field-Effect Transistors: Overcoming PN Doping Challenges in Transition Metal Dichalcogenides

Visible Light-Assisted High-Performance Mid-Infrared Photodetectors Based on Single InAs Nanowire

Formation of an MoTe<sub>2</sub> based Schottky junction employing ultra-low and high resistive metal contacts

The role of 2-Dimensional materials for electronic devices

Optical modulators with 2D layered materials

Ultrasensitive all-2D MoS2 phototransistors enabled by an out-of-plane MoS2 PN homojunction

Photodetectors based on graphene, other two-dimensional materials and hybrid systems

Electronics based on two-dimensional materials

Arrayed Van Der Waals Broadband Detectors for Dual‐Band Detection

Ultrahigh‐Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe<sub>2</sub>/Graphene/SnS<sub>2</sub> p–g–n Junctions

Wafer-scale production of patterned transition metal ditelluride layers for two-dimensional metal–semiconductor contacts at the Schottky–Mott limit

Transistors based on two-dimensional materials for future integrated circuits

Contacts in 2D

Wafer-scale and universal van der Waals metal semiconductor contact

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