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46 та иш

Иш: Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies

  1. The missing memristor found

    Dmitri B. Strukov, Gregory S. Snider, Duncan R. Stewart +1

    Мақола200811 иқтибос
    ABI

  2. Dielectric and magnetic properties of (Zn, Co) co-doped SnO <sub>2</sub> nanoparticles

    Khan Rajwali, Minghu Fang

    Мақола20159 иқтибос
    ABI

  3. Threshold switching in nickel-doped zinc oxide based memristor for artificial sensory applications

    Naveed ur Rehman, Nasir Ilyas, Nourreddine Sfina +13

    МақолаAdvanced Memory and Neural ComputingNanoscale20228 иқтибос
    ABI

  4. The structural and dilute magnetic properties of (Co, Li) co-doped-ZnO semiconductor nanoparticles

    Sattam Al Otaibi, Mohammad Ilyas Khan, Mohammed Khaloufa Almesfer +7

    Мақола20227 иқтибос
    ABI

  5. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

    Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

    МақолаAdvanced Memory and Neural ComputingACS Applied Electronic Materials20236 иқтибос
    ABI

  6. Enhanced electrical and magnetic properties of (Co, Yb) co-doped ZnO memristor for neuromorphic computing

    Noureddine Elboughdiri, Shahid Iqbal, Sherzod Abdullaev +4

    МақолаAdvanced Memory and Neural ComputingRSC Advances20236 иқтибос
    ABI

  7. Ultrastructural Characterization of the Lower Motor System in a Mouse Model of Krabbe Disease

    Valentina Cappello, Laura Marchetti, Paola Parlanti +5

    Мақола20166 иқтибос
    ABI

  8. Resistive switching properties in ferromagnetic co-doped ZnO thin films-based memristors for neuromorphic computing

    Muhammad Faisal Hayat, Naveed Ur Rahman, Aziz Ullah +8

    МақолаAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics20244 иқтибос
    ABI

  9. Intrinsic and interfacial effect of electrode metals on the resistive switching behaviors of zinc oxide films

    Wuhong Xue, Wei Xiao, Jie Shang +10

    Мақола20143 иқтибос
    ABI

  10. Ce-doping induced enhancement of resistive switching performance of Pt / NiFe 2 O 4 / Pt memory devices

    Aize Hao, Shuai He, Ni Qin +2

    Мақола20173 иқтибос
    ABI

  11. Real‐Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide‐Electrolyte‐Based ReRAM

    Qi Liu, Jun Sun, Hangbing Lv +6

    Мақола20123 иқтибос
    ABI

  12. Magnetic properties of Fe doped, Co doped, and Fe+Co co-doped ZnO

    J. J. Beltrán, J. Osorio, C. A. Barrero +2

    Мақола20133 иқтибос
    ABI

  13. A review of emerging non-volatile memory (NVM) technologies and applications

    An Chen

    Шарҳ мақола20163 иқтибос
    ABI

  14. Memristor with Ag‐Cluster‐Doped TiO<sub>2</sub> Films as Artificial Synapse for Neuroinspired Computing

    Xiaobing Yan, Jianhui Zhao, Sen Liu +4

    Мақола20173 иқтибос
    ABI

  15. Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices

    Tuo Shi, Rui Yang, Xin Guo

    Мақола20162 иқтибос
    ABI

  16. Effect of (Li, Mn) co-doping on structural, optical and magnetic properties of chunk-shaped nano ZnO

    N. Rajamanickam, R. N. Mariammal, S. Rajashabala +1

    Мақола20142 иқтибос
    ABI

  17. ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory

    Usman Isyaku Bature, Mohd Haris Md Khir, I. Md Nawi +2

    Мақола20212 иқтибос
    ABI

  18. Bipolar resistive switching behaviors in Cr-doped ZnO films

    Ding Lin Xu, Ying Xiong, Ming Hua Tang +6

    Мақола20132 иқтибос
    ABI

  19. Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability

    Yang-Shun Fan, Po‐Tsun Liu, Ching-Hui Hsu

    Мақола20132 иқтибос
    ABI

  20. Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High‐Performance Memristor

    Feng Miao, John Paul Strachan, J. Joshua Yang +7

    Мақола20112 иқтибос
    ABI

  21. Runx1 Determines Nociceptive Sensory Neuron Phenotype and Is Required for Thermal and Neuropathic Pain

    Chih-Li Chen, Daniel C. Broom, Yang Liu +7

    Мақола20062 иқтибос
    ABI

  22. Future Directions and Challenges for ETox Flash Memory Scaling

    G. Atwood

    Мақола20042 иқтибос
    ABI

  23. Dual-functional Memory and Threshold Resistive Switching Based on the Push-Pull Mechanism of Oxygen Ions

    Yi-Jen Huang, Shih-Chun Chao, Der‐Hsien Lien +3

    Мақола20162 иқтибос
    ABI

  24. Ultra-Low Switching Voltage Induced by Inserting SiO<sub>2</sub>Layer in Indium–Tin–Oxide-Based Resistance Random Access Memory

    Chih‐Cheng Shih, Wen‐Jen Chen, Kuan‐Chang Chang +12

    Мақола20162 иқтибос
    ABI

  25. A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array

    Mohammed Zackriya, Harish M. Kittur, Albert Chin

    Мақола20172 иқтибос
    ABI