Determining discrete energetic states in a ligated silicon structure using a mathematical model

The Al-SiO2-n-Si<Ni> structure without addition is experimental and T=300K. the density of surface states obtained using the model was determined. Using the mathematical model, discrete states on the surface at T=5 K were obtained. After that, the effect of Ni addition on the density of surface states was considered. The density of surface states obtained using the model, the presence of nickel addition changes the spectrum and it has Ec-0.17 eV, Ec-0.34 eV, Ec-0.39 eV. shows clearly visible peaks near the energies. According to model calculations, Ec-0.17 eV, Ec-0.34 eV, Ec-0.39 eV at T=5 K. A discrete cluster of concentrated energies appears.

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