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Иш: To the Theory of Intraband Single-Photon Absorption of Light in Semiconductors with Zinc-Blende Structure

  1. Band parameters for III–V compound semiconductors and their alloys

    I. Vurgaftman, J. R. Meyer, L. R. Ram‐Mohan

    Мақола200121 иқтибос
    ABI

  2. Linearly and circular dichroism in a semiconductor with a complex valence band with allowance for four-photon absorption of light

    Rustam Yavkachovich Rasulov, I. Éshboltaev

    МақолаNonlinear Optical Materials StudiesPhysics of the Solid State201716 иқтибос
    ABI

  3. Single and Multiphoton Optical Transitions in Atomically Thin Layers of Transition Metal Dichalcogenides

    Rustam Yavkachovich Rasulov, Voxob Rustamovich Rasulov, Kamolakhon K. Urinova +2

    Мақола2D Materials and ApplicationsEast European Journal of Physics20247 иқтибос
    ABI

  4. Nonlinear optical absorption and photocurrents in topological insulators

    N. V. Leppenen, L. E. Golub

    Мақола20226 иқтибос
    ABI

  5. Interband Multiphoton Absorption of Polarized Radiation and Its Linear Circular Dichroism in Semiconductors in the Kane Approximation

    Rustam Yavkachovich Rasulov, Voxob Rustamovich Rasulov, Mavzurbek Kh. Kuchkarov +1

    МақолаSemiconductor Quantum Structures and DevicesRussian Physics Journal20234 иқтибос
    ABI

  6. Parameter Sets Due to Fittings of the Temperature Dependencies of Fundamental Bandgaps in Semiconductors

    R. Pässler

    Мақола19994 иқтибос
    ABI

  7. Two- and Three-Photon Linear Circular Dichroism in Semiconductors of Cubic Symmetry

    Rustam Yavkachovich Rasulov, I. Éshboltaev, Ravshan Rustamovich Sultonov

    МақолаNonlinear Optical Materials StudiesRussian Physics Journal20213 иқтибос
    ABI

  8. Theory of linear IR absorption by semiconductors with degenerate bands

    Д. А. Паршин, Andrew Shabaev

    Мақола19872 иқтибос
    ABI

  9. Nonlinear intensity dependence of edge photocurrents in graphene induced by terahertz radiation

    S. Candussio, L. E. Golub, S. Bernreuter +7

    Мақола20212 иқтибос
    ABI

  10. Superlinear Photogalvanic Effects in (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>Bi</mml:mi><mml:mrow><mml:mn>0.3</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>Sb</mml:mi><mml:mrow><mml:mn>0.7</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mo stretchy="false">)</mml:mo><mml:mn>2</mml:mn></mml:msub></mml:math>(<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline" overflow="scroll"><mml:msub><mml:mi>Te</mml:mi><mml:mrow><mml:mn>0.1</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mi>Se</mml:mi><mml:mrow><mml:mn>0.9</mml:mn></mml:mrow></mml:msub><mml:msub><mml:mo stretchy="false">)</mml:mo><mml:mn>3</mml:mn></mml:msub></mml:math>: Probing Three-Dimensional Topological Insulator Surface States at Room Temperature

    S. N. Danilov, L. E. Golub, Thomas Mayer +8

    Мақола20212 иқтибос
    ABI