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Иш: Current Mechanisms in Zinc Diffusion-doped Silicon Samples at T = 300 K

  1. Current Injection in Solids

    A. M. Stoneham

    Мақола197027 иқтибос
    ABI

  2. Сарлавҳасиз

    Бошқа19 иқтибос
    ABI

  3. Concepts in photoconductivity and allied problems

    Мақола196410 иқтибос
    ABI

  4. The electrical properties of zinc in silicon

    Sharon M. Weiss, R. Beckmann, Rainer Kassing

    Мақола19903 иқтибос
    ABI

  5. Carrier transport mechanisms in semiconductor nanostructures and devices

    M. A. Rafiq

    Мақола20183 иқтибос
    ABI

  6. Diffusion and Electrical Behavior of Zinc in Silicon

    C. S. Fuller, François Morin

    Мақола19573 иқтибос
    ABI

  7. Mechanisms of Current Transition in High Compensated Silicon Samples with Zinc Nanoclusters

    Э. У. Арзикулов, M. Radzhabova, Sh. J. Quvondiqov +1

    МақолаSilicon Nanostructures and PhotoluminescenceEast European Journal of Physics20232 иқтибос
    ABI

  8. Сарлавҳасиз

    Бошқа2 иқтибос
    ABI

  9. Infrared spectroscopy of the neutral zinc double-acceptor in silicon

    E. Merk, James Heyman, E. E. Häller

    Мақола19892 иқтибос
    ABI

  10. Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K

    Malte Neul, Isabelle V. Sprave, Laura K. Diebel +6

    Мақола20242 иқтибос
    ABI