Ушбу иш иқтибос қилган ишлар

29 та иш

Иш: Modeling and Theoretical Study of p-n Heterojunctions Based on CdTe/Si: Band Alignment, Carrier Transport, and Temperature-Dependent Electrophysical Properties

1. Technology of fabrication of CdS_xTe_1-x solid solution on silicon substrate

   I.B. Sapaev, S. Sadullaev, D. Babajanov +5

   МақолаAdvanced Semiconductor Detectors and MaterialsE3S Web of Conferences20231 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.432351

2. Influence of the parameters to transition capacitance at nCdS-pSi heterostructure

   I.B. Sapaev, Б. Сапаев, S. Sadullaev +5

   МақолаChalcogenide Semiconductor Thin FilmsE3S Web of Conferences20231 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.432352

3. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.432353

4. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.432355