Neutron activation and mass-spectrometric determination of the trace impurity composition of high-purity silicon
B. Kh. YarmatovInstitute of Nuclear Physics of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanВ. К. КарандашевInstitute of Problems of Microelectronics Technology and High-Purity Materials of the Russian Academy of Sciences, Chernogolovka, Russian FederationI. I. SadikovInstitute of Nuclear Physics of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanT. UsmanovInstitute of Nuclear Physics of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, UzbekistanYa. A. AkhmedovInstitute of Nuclear Physics of the Academy of Sciences of the Republic of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
Abstract This paper discusses the use of inductively coupled plasma mass spectrometry (ICP-MS) and instrumental neutron activation analysis (INAA) to determine the trace impurity composition of high-purity silicon. The technique allows one to determine about 65 impurity elements with detection limits of n×10 -8 - n×10 -13 wt.%. The technique can be used to determine the trace impurity composition of ultra-pure silicon.
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