В. К. Карандашев

3 та иш

Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, 142432, Chernogolovka, Moscow District, Russia

1. Extraction-chromatographic system TBP-HBr in radiochemical neutron activation analysis of high-purity materials

   В. К. Карандашев, С. С. Гражулене, I. I. Sadykov

   МақолаNuclear Physics and ApplicationsMicrochimica Acta19930 иқтибос

   ABIABI:AkademIndex/openalex/1993.article.000043

2. Ensuring the analysis accuracy by ICP-MS method using radioactive and highly-enriched stable isotope tracers and gamma-ray spectrometry

   В. К. Карандашев, В. П. Колотов, I. I. Sadikov

   МақолаIsotope Analysis in EcologyJournal of Radioanalytical and Nuclear Chemistry20200 иқтибос

   ABIABI:AkademIndex/openalex/2020.article.000593

3. Neutron activation and mass-spectrometric determination of the trace impurity composition of high-purity silicon

   B. Kh. Yarmatov, В. К. Карандашев, I. I. Sadikov +2

   МақолаIon-surface interactions and analysisJournal of Physics Conference Series20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.004557