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7 та иш

Иш: EMF Induced in a p–n Junction under a Strong Microwave Field and Light

  1. Mathematical modeling determination coefficient of magneto-optical absorption in semiconductors in presence of external pressure and temperature

    U. I. Erkaboev, R. G. Rakhimov, N. A. Sayidov

    МақолаSemiconductor Quantum Structures and DevicesModern Physics Letters B202116 иқтибос
    ABI

  2. A new method for determining the bandgap in semiconductors in presence of external action taking into account lattice vibrations

    U. I. Erkaboev, G. Gulyamov, R. G. Rakhimov

    МақолаSemiconductor Quantum Structures and DevicesIndian Journal of Physics202114 иқтибос
    ABI

  3. Changes in diodes with a p-n-transition under the influence of microwave radiation

    G. Gulyamov, Gulnoza Majidova, Feruza Muxitdinova +1

    МақолаSemiconductor Quantum Structures and DevicesAIP conference proceedings20233 иқтибос
    ABI

  4. Changing the Voltage of the p-n Junction in a Magnetic Field

    G. Gulyamov, Feruza Mukhitdinova, Gulnoza Majidova

    МақолаSemiconductor Quantum Structures and Devicese-Journal of Surface Science and Nanotechnology20232 иқтибос
    ABI

  5. Change in the quasi-Fermi level and current - Voltage characteristics of diodes with a p-n junction under the action of light and deformation

    G. Gulyamov, Bahodir Shahobiddinov, Alisher Z. Soliyev +2

    МақолаSemiconductor materials and interfacesAIP conference proceedings20232 иқтибос
    ABI

  6. Influence of heating of charge carriers on the contact resistance of the Schottky barrier

    G. Gulyamov, Q. Umarov, Alisher Z. Soliyev +1

    МақолаSemiconductor materials and interfacesAIP conference proceedings20240 иқтибос
    ABI

  7. Influence of Temperature on Characteristics of a Diode with a p-n Junction in a Magnetic Field

    G. Gulyamov, Gulnoza Majidova, Saodat Madumarova +1

    МақолаAdvanced Research in Systems and Signal Processinge-Journal of Surface Science and Nanotechnology20240 иқтибос
    ABI