Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: HfO<sub>2</sub>-Based RRAM: Electrode Effects, Ti/HfO<sub>2</sub> Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and <italic>Ab Initio</italic> Calculations

1. High-stability resistive switching memristor with high-retention memory window response for brain-inspired computing

   Rajwali Khan, Shahid Iqbal, Kwun Nam Hui +4

   МақолаAdvanced Memory and Neural ComputingSensors and Actuators A Physical20252 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.000136

2. Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory

   Teng‐Yu Su, Chi‐Hsin Huang, Yu‐Chuan Shih +5

   МақолаAdvanced Memory and Neural ComputingJournal of Materials Chemistry C20170 иқтибос

   ABIABI:AkademIndex/openalex/2017.article.000071