Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Manganese depth-concentration profiles in ion-implanted silicon studied by Rutherford backscattering

1. Defect Formation and Displacement of Atoms on the Surface of a LiF Crystal under Bombardment with Low-Energy Cesium Ions

   Utkirjon Sharopov, O. A. Abdulkhaev, Б. Э. Эгамбердиев +11

   МақолаIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques20242 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.144568

2. LiF: past, present, and future in advanced material applications—insights into battery technology: a review

   Utkirjon Sharopov, Tukhtamurod Juraev, Siddik Kakhkhorov +8

   Шарҳ мақолаAdvancements in Battery MaterialsIonics20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.review-article.000048