Асосий контентга ўтиш
AkademIndex

Маҳсулотлар

Ишлаб чиқувчилар учун

AkademBaseЭкотизим учун очиқ API
← Ишга қайтиш

Ушбу иш иқтибос қилган ишлар

5 та иш

Иш: The current characteristics of p—i—n and p+—i—p+ structures based on hydrogenated amorphous silicon at various temperatures and excitation levels

  1. Current Injection in Solids

    A. M. Stoneham

    Мақола197027 иқтибос
    ABI

  2. Carrier Generation and Recombination in P-N Junctions and P-N Junction Characteristics

    Chih‐Tang Sah, Robert N. Noyce, W. Shockley

    Мақола195714 иқтибос
    ABI

  3. Mobility-lifetime product and interface property in amorphous silicon solar cells

    H. Okamoto, H. Kida, Shuichi Nonomura +2

    Мақола19832 иқтибос
    ABI

  4. On the generation-recombination currents in p-n junctions of semiconductors with continuous gap-state spectrum

    A. Yu. Leĭderman

    МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19851 иқтибос
    ABI

  5. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI