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Ушбу иш иқтибос қилган ишлар

43 та иш

Иш: Single flake homo p–n diode of MoTe <sub>2</sub> enabled by oxygen plasma doping

  1. High-efficiency sub-microscale uncertainty measurement method using pattern recognition

    Chenyang Zhao, Chi Fai Cheung, Peng Xu

    Мақола202015 иқтибос
    ABI

  2. Enhanced red luminescence in CaAl<sub>12</sub>O<sub>19</sub>:Mn<sup>4+</sup><i>via</i> doping Ga<sup>3+</sup> for plant growth lighting

    Li Kong, Ying‐Ying Liu, Langping Dong +4

    Мақола20208 иқтибос
    ABI

  3. Auger scattering dynamic of photo-excited hot carriers in nano-graphite film

    Sichao Du, Juxin Yin, Hao Xie +11

    Мақола20228 иқтибос
    ABI

  4. Mixed-Mode Operation of Hybrid Phase-Change Nanophotonic Circuits

    Yegang Lü, Matthias Stegmaier, Pavan Nukala +5

    Бошқа20167 иқтибос
    ABI

  5. Bipolar Photoresponse of a Graphene Field-Effect Transistor Induced by Photochemical Reactions

    Muhammad Farooq Khan, Ehsan Elahi, Najam Ul Hassan +8

    МақолаGraphene research and applicationsACS Applied Electronic Materials20236 иқтибос
    ABI

  6. Improved memory performance of ALD grown HfO2 films by nitrogen doping

    Jamal Aziz, Muhammad Farooq Khan, Daniel Neumaier +9

    Мақола20234 иқтибос
    ABI

  7. Proportional Optimization Model of Multiscale Spherical BN for Enhancing Thermal Conductivity

    Senyuan Yang, Zhengyong Huang, Qinghua Hu +4

    Мақола20224 иқтибос
    ABI

  8. Electric and Photovoltaic Behavior of a Few‐Layer α‐MoTe<sub>2</sub>/MoS<sub>2</sub> Dichalcogenide Heterojunction

    Atiye Pezeshki, Seyed Hossein Hosseini Shokouh, Tavakol Nazari +2

    Мақола20164 иқтибос
    ABI

  9. Innovations in self-powered nano-photonics of emerging and flexible two-dimensional materials

    Muhammad Abubakr, Ehsan Elahi, Shania Rehman +10

    Мақола2D Materials and ApplicationsMaterials Today Physics20233 иқтибос
    ABI

  10. Two-dimensional materials memory devices with floating metal gate for neuromorphic applications

    Muhammad Asghar Khan, Sungbin Yim, Shania Rehman +5

    Мақола20233 иқтибос
    ABI

  11. Carrier‐Type Modulation and Mobility Improvement of Thin MoTe<sub>2</sub>

    Deshun Qu, Xiaochi Liu, Ming Huang +6

    Мақола20173 иқтибос
    ABI

  12. Indirect-to-Direct Band Gap Crossover in Few-Layer MoTe<sub>2</sub>

    Ignacio Gutiérrez Lezama, Ashish Arora, Alberto Ubaldini +4

    Мақола20153 иқтибос
    ABI

  13. Tuning the Red-to-Green-Upconversion Luminescence Intensity Ratio of Na3ScF6: 20% Yb3+, 2% Er3+ Particles by Changes in Size

    Yongling Zhang, Xiang Liu, Ming‐Xing Song +1

    Мақола20233 иқтибос
    ABI

  14. Structure design and properties investigation of Bi2O2Se/graphene van der Waals heterojunction from first-principles study

    Jieshi Chen, Zeqiang Zhang, Hao Lü

    Мақола20222 иқтибос
    ABI

  15. Reversible tuning of charge Carrier's polarity of MoTe2 FETs enabled by laser and high temperature

    Irsa Zulfiqar, Muhammad Asghar Khan, Sania Gul +7

    Мақола2D Materials and ApplicationsPhysica B Condensed Matter20232 иқтибос
    ABI

  16. Design Strategies for Perovskite-Type High-Entropy Oxides with Applications in Optics

    Songbo Ye, Jinpeng Zhu, Saisai Zhu +5

    Мақола20232 иқтибос
    ABI

  17. Enhancement in figure of merit in N-type Bi(R)-Te thermoelectric nanomaterials

    Faisal Ghafoor, Bilal Ghafoor, Deok‐kee Kim +2

    Мақола20232 иқтибос
    ABI

  18. Flexible Wearable Strain Sensors Based on Laser-Induced Graphene for Monitoring Human Physiological Signals

    Yao Zou, Mian Zhong, Shichen Li +10

    Мақола20232 иқтибос
    ABI

  19. Design of Bioinspired Highly Aligned Bamboo-Mimetic Metamaterials With Structural and Functional Anisotropy

    Yingfan Zhang, Zhengyong Huang, Feipeng Wang +2

    Мақола20232 иқтибос
    ABI

  20. Reconfigurable Complementary Monolayer MoTe<sub>2</sub> Field-Effect Transistors for Integrated Circuits

    Stefano Larentis, Babak Fallahazad, Hema C. P. Movva +6

    Мақола20172 иқтибос
    ABI

  21. Homogeneous 2D MoTe<sub>2</sub> p–n Junctions and CMOS Inverters formed by Atomic‐Layer‐Deposition‐Induced Doping

    June Yeong Lim, Atiye Pezeshki, Sehoon Oh +7

    Мақола20172 иқтибос
    ABI

  22. High-Responsivity Photovoltaic Photodetectors Based on MoTe2/MoSe2 van der Waals Heterojunctions

    Hao Luo, Bolun Wang, Enze Wang +3

    Мақола20192 иқтибос
    ABI

  23. MoTe<sub>2</sub>van der Waals homojunction p–n diode with low resistance metal contacts

    Sikandar Aftab, Muhammad Farooq Khan, Praveen Gautam +2

    Мақола20192 иқтибос
    ABI

  24. Anisotropic medium sensing controlled by bound states in the continuum in polarization-independent metasurfaces

    Jing-Yi Gao, Jin Liu, Haima Yang +3

    Мақола20232 иқтибос
    ABI

  25. Сарлавҳасиз

    Бошқа1 иқтибос
    ABI