Ушбу иш иқтибос қилган ишлар

3 та иш

Иш: Lifetime specifics of nonequilibrium carriers in photoelectric cells based on gallium arsenide obtained via the Czochralski method

1. Thermovoltaic processes in gallium arsenide doped with tin

   A. Yu. Leĭderman, А. С. Саидов, M. M. Hashaev +1

   МақолаChalcogenide Semiconductor Thin FilmsApplied Solar Energy20123 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.538373

2. Optical Properties of <i>n</i>-Type GaAs. II. Formation of Efficient Hole Traps during Annealing in Te-Doped GaAs

   C. J. Hwang

   Мақола19692 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.538138

3. Evidence for Self-Activated Luminescence in GaAs: The Gallium Vacancy-Donor Center

   E. W. Williams

   Мақола19682 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.538140