Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Study of the dependence of the degree of disordering of the surface layers of Si(111) and Ge(111) single crystals upon bombardment with low-energy ions

1. Study of the physical nature of Mn4Si7 crystals formed by the diffusion method using an X-ray diffraction

   Б.Д. Игамов, A.I. Kamardin, D.Kh. Nabiev +5

   МақолаX-ray Diffraction in CrystallographyJournal of Crystal Growth20248 иқтибос

   ABIABI:AkademIndex/openalex/2024.article.000891

2. Theoretical and experimental study of plasmon oscillation dispersion in Si and Ge crystals

   З. А. Исаханов, Б. Е. Умирзаков, Gunel Imanova

   МақолаSurface and Thin Film PhenomenaOptical Materials X20242 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.267089