Fabrication of ultrafine silicon layers on sapphire
A. A. ShemukhinEPIEL Company, Zelenograd, Moscow, 124460, RussiaYu. V. BalakshinEPIEL Company, Zelenograd, Moscow, 124460, RussiaV. S. ChernyshEPIEL Company, Zelenograd, Moscow, 124460, RussiaAndrey PatrakeevEPIEL Company, Zelenograd, Moscow, 124460, RussiaS. GolubkovEPIEL Company, Zelenograd, Moscow, 124460, RussiaN. N. EgorovEPIEL Company, Zelenograd, Moscow, 124460, RussiaA. I. SidorovEPIEL Company, Zelenograd, Moscow, 124460, RussiaB. A. MalyukovEPIEL Company, Zelenograd, Moscow, 124460, RussiaВ. Н. СтаценкоEPIEL Company, Zelenograd, Moscow, 124460, RussiaV. D. ChumakEPIEL Company, Zelenograd, Moscow, 124460, Russia
2012en
ABI
Аннотация
The effect of energy, dosage, and temperature of irradiation of silicon-on-sapphire structures by Si+ ions, as well as parameters of recrystallization annealing, on crystallinity of silicon film is shown. Implantation conditions and recrystallization annealing conditions are determined.
Ҳали таржима қилинмаган
Идентификаторлар
Иқтибослар ва манбалар
2 та иқтибос0 та фойдаланилган манба