Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Fabrication of ultrafine silicon layers on sapphire

1. Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing

   Samad Nimatov, Б. Е. Умирзаков, F. Ya. Khudaikulov +1

   МақолаIon-surface interactions and analysisTechnical Physics20198 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.108398

2. Iron ions distribution profile obtained by irradiating the silicon single crystal

   A. A. Shemukhin, A. V. Kozhemiako, Yu. V. Balakshin +1

   МақолаIon-surface interactions and analysisJournal of Physics Conference Series20170 иқтибос

   ABIABI:AkademIndex/openalex/2017.article.000457