Ушбу иш иқтибос қилган ишлар

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Иш: The radiation-induced defects production in P-type silicon doped by impurities of transitional elements

1. Deep impurities in semiconductors

   A. G. Milnes

   Китоб197312 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.364962

2. Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

   D. V. Lang

   Мақола19749 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.424573

3. Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Si-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>E</mml:mi></mml:math>Center

   G. D. Watkins, J. W. Corbett

   Мақола19645 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.360563

4. On several regularities of deep levels of d-impurities in silicon

   Marat S. Yunusov, A. Akhmadaliev, Б. Л. Оксенгендлер +1

   МақолаSilicon and Solar Cell Technologiesphysica status solidi (a)19952 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.408791

5. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.424572

6. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.424574

7. Сарлавҳасиз

   Бошқа1 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.424575