Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Material parameters of In1−<i>x</i>Ga<i>x</i>As<i>y</i>P1−<i>y</i> and related binaries

1. Energy Levels in Nanowires and Nanorods with a Finite Potential Well

   G. Gulyamov, A. G. Gulyamov, A. B. Davlatov +1

   МақолаSemiconductor Quantum Structures and DevicesAdvances in Condensed Matter Physics202011 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.331828

2. Manganese doping of In1?xGaxAsyP1-y films in liquid-phase epitaxy

   V. P. Germogenov, O. M. Ivleva, С. В. Пономарев +2

   МақолаSemiconductor Quantum Structures and DevicesRussian Physics Journal19920 иқтибос

   ABIABI:AkademIndex/openalex/1992.article.000137