Ушбу ишга иқтибос қилган ишлар

3 та иш

Иш: Recent progress in Ga₂O₃power devices

1. Effect of SiO₂ and Post-Annealed Ga₂O₃ Buffer Layers on Ga₂O₃ Thin Film Growth and Properties

   Noiba U. Botirova, Azamat O. Arslanov, Gofur B. Eshonkulov +4

   МақолаGa2O3 and related materialsCrystal Growth & Design20251 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.340347

2. Twin-induced phase transition from β-Ga₂O₃ to α-Ga₂O₃ in Ga₂O₃ thin films

   Byeongdae Choi, Bunyod Allabergenov, Hong‐Kun Lyu +1

   МақолаGa2O3 and related materialsApplied Physics Express20181 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.363874

3. Enhanced optical properties of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si48.svg" display="inline" id="d1e782"> <mml:mi>β</mml:mi> </mml:math> -Ga <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si49.svg" display="inline" id="d1e787"> <mml:msub> <mml:mrow/> <mml:mrow> <mml:mn>2</mml:mn> </mml:mrow> </mml:msub> </mml:math> O <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si89.svg" display="inline" id="d1e795"> <mml:msub> <mml:mrow/> <mml:mrow> <mml:mn>3</mml:mn> <mml:mo>−</mml:mo> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> </mml:math> S <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si51.svg" display="inline" id="d1e808"> <mml:msub> <mml:mrow/> <mml:mrow> <mml:mi>x</mml:mi> </mml:mrow> </mml:msub> </mml:math> : A DFT study

   G. Eshonqulov, Anora Meyliyeva, Sh. U. Yuldashev +1

   МақолаGa2O3 and related materialsPhysica B Condensed Matter20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.001772