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Noiba U. Botirova

8 та иш

Center of Nanotechnology Development, National University of Uzbekistan, Tashkent, Uzbekistan

  1. Resistive Switching Behavior of SnO₂/ZnO Heterojunction Thin Films for Non-Volatile Memory Applications

    Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +6

    МақолаAdvanced Memory and Neural ComputingEast European Journal of Physics20254 иқтибос
    ABI

  2. NDR in Co:SnO <sub>2</sub> Memristors: Nanocluster Control for Enhanced Performance

    Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

    МақолаAdvanced Memory and Neural ComputingCrystal Growth & Design20252 иқтибос
    ABI

  3. Memristive Switching Behavior of Sol–Gel Derived Ga₂O₃ Thin Films

    Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +6

    МақолаAdvanced Memory and Neural ComputingEast European Journal of Physics20252 иқтибос
    ABI

  4. Impact of Precursor Molar Concentration on the Structural and Optical Properties of ZnO Thin Films Synthesized by Ultrasonic Spray Pyrolysis

    Azamat O. Arslanov, Sh. U. Yuldashev, Noiba U. Botirova +3

    МақолаZnO doping and propertiesPhysical Science International Journal20252 иқтибос
    ABI

  5. Effect of SiO<sub>2</sub> and Post-Annealed Ga<sub>2</sub>O<sub>3</sub> Buffer Layers on Ga<sub>2</sub>O<sub>3</sub> Thin Film Growth and Properties

    Noiba U. Botirova, Azamat O. Arslanov, Gofur B. Eshonkulov +4

    МақолаGa2O3 and related materialsCrystal Growth & Design20251 иқтибос
    ABI

  6. Advancements in Halide Perovskite Solar Cells: Role of PEDOT: PSS and PTAA as Hole Transport Layers

    Noiba U. Botirova, Azamat O. Arslanov, Sh. U. Yuldashev +1

    МақолаPerovskite Materials and ApplicationsApplied Solar Energy20250 иқтибос
    ABI

  7. Magnetically Tunable Resistive Switching in Mn-Doped SnO <sub>2</sub> Thin Films

    Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

    МақолаZnO doping and propertiesCrystal Growth & Design20260 иқтибос
    ABI

  8. Defect-engineered resistive switching and NDR behavior in Mn-doped SnO2 memristors

    Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

    МақолаAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics20260 иқтибос
    ABI