Defect-engineered resistive switching and NDR behavior in Mn-doped SnO2 memristors
Jamoliddin X. MurodovCenter for Nanotechnologies Development, National University of Uzbekistan, University Street 4, 100174, Tashkent, UzbekistanSh. U. YuldashevCenter for Nanotechnologies Development, National University of Uzbekistan, University Street 4, 100174, Tashkent, UzbekistanAzamat O. ArslanovDepartment of Physics, National University of Uzbekistan, University Street 4, 100174, Tashkent, UzbekistanNoiba U. BotirovaCenter for Nanotechnologies Development, National University of Uzbekistan, University Street 4, 100174, Tashkent, UzbekistanJavohir Sh. KhudoykulovDepartment of Physics, National University of Uzbekistan, University Street 4, 100174, Tashkent, UzbekistanRa’no Sh. SharipovaCenter for Nanotechnologies Development, National University of Uzbekistan, University Street 4, 100174, Tashkent, Uzbekistan
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