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Javohir Sh. Khudoykulov

4 та иш

Department of Physics, National University of Uzbekistan, University Street 4, Tashkent 100174, Uzbekistan

  1. NDR in Co:SnO <sub>2</sub> Memristors: Nanocluster Control for Enhanced Performance

    Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

    МақолаAdvanced Memory and Neural ComputingCrystal Growth & Design20252 иқтибос
    ABI

  2. Effect of SiO<sub>2</sub> and Post-Annealed Ga<sub>2</sub>O<sub>3</sub> Buffer Layers on Ga<sub>2</sub>O<sub>3</sub> Thin Film Growth and Properties

    Noiba U. Botirova, Azamat O. Arslanov, Gofur B. Eshonkulov +4

    МақолаGa2O3 and related materialsCrystal Growth & Design20251 иқтибос
    ABI

  3. Magnetically Tunable Resistive Switching in Mn-Doped SnO <sub>2</sub> Thin Films

    Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

    МақолаZnO doping and propertiesCrystal Growth & Design20260 иқтибос
    ABI

  4. Defect-engineered resistive switching and NDR behavior in Mn-doped SnO2 memristors

    Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

    МақолаAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics20260 иқтибос
    ABI