Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Diffusion of boron and phosphorus in silicon during high-temperature ion implantation

1. Formation of Complexes of Phosphorus and Boron Impurity Atoms in Silicon

   М. К. Бахадырханов, Z. T. Kenzhaev, S. Koveshnikov +2

   МақолаSilicon and Solar Cell TechnologiesInorganic Materials20228 иқтибос

   ABIABI:AkademIndex/openalex/2022.article.000633

2. Codiffusion of Gallium and Phosphorus Atoms in Silicon

   Н. Ф. Зикриллаев, С. Б. Исамов, S. Koveshnikov +2

   МақолаSilicon and Solar Cell TechnologiesSurface Engineering and Applied Electrochemistry20232 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.419059