Ideal 4H-SiC pn junction and its characteristic shunt
Anatoly M. Strel’chukA.F. Ioffe Physico-Technical Institute Russian Academy of Science, Politechnicheskaya 26, St. Petersburg 194021, RussiaN.S. SavkinaA.F. Ioffe Physico-Technical Institute Russian Academy of Science, Politechnicheskaya 26, St. Petersburg 194021, Russia
2001en
ABI
Аннотация
Аннотация мавжуд эмас.
Идентификаторлар
Иқтибослар ва манбалар
3 та иқтибос0 та фойдаланилган манба