Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: The photovoltaic impact of atomic layer deposited TiO 2 interfacial layer on Si-based photodiodes

1. Technology of production and photoelectric characteristics of AlB₁₀ heterojunctions based on silicon

   Numonjon Sultanov, Zokirjon Mirzajonov, Fakhriddin T. Yusupov

   МақолаSemiconductor materials and interfacesE3S Web of Conferences20236 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.378265

2. Fabrication of photodiodes based on graphene oxide (GO) doped lanthanum hexaboride (LaB6) nanocomposites

   Mesut Yalçın, Abdullah G. Al‐Sehemi, İbrahi̇m Erol +5

   МақолаElectronic and Structural Properties of OxidesDiamond and Related Materials20230 иқтибос

   ABIABI:AkademIndex/openalex/2023.article.001254