Ушбу ишга иқтибос қилган ишлар

2 та иш

Иш: Type of Optical Transitions at the Fundamental Absorption Edge in TlGaSe2 and TlInS2 Crystals Subjected to γ-Radiation

1. Influence of electron irradiation on the band gap and microhardness of TlInS ₂ , TlInSSe and TlIn _0.99 Cr _0.01 S ₂ single crystals

   F. K. Khallokov, Gunel Imanova, S. Kh. Umarov +4

   МақолаSolid-state spectroscopy and crystallographyMaterials Research Innovations20243 иқтибос

   ABIABI:AkademIndex/openalex/2026.other.267078

2. Influence of 2 MeV electron irradiation on the band gap of TlGaS2 and TlGaSe2 single crystals

   S. Kh. Umarov, N. Z. Gasanov, F. K. Khallokov +2

   МақолаSolid-state spectroscopy and crystallographySolid State Communications20250 иқтибос

   ABIABI:AkademIndex/openalex/2025.article.011269